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| Advance Product Information December 5, 2004 12-18 GHz Ku-Band 3-Stage Driver Amplifier Key Features * * * * * * TGA2507-EPU 12-18 GHz Bandwidth 28 dB Nominal Gain 20 dBm P1dB Bias: 5,6,7 V, 80 10% mA Self Bias 0.5 um 3MI mmW pHEMT Technology Chip Dimensions: 1.80 x 0.83 x 0.1 mm (0.071 x 0.031 x 0.004) in Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 80 mA 32 28 24 Gain (dB) 20 16 12 8 4 0 8 10 12 14 16 18 20 22 Frequency (GHz) 0 Primary Applications * Point to Point Radio * Military Ku-Band * Ku-Band Space Return Loss (dB) -5 -10 Gain IRL -15 -20 -25 * VSAT ORL -30 -35 -40 24 22 P 1dB (dB m ) 20 18 16 11 12 13 14 15 16 17 18 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V I + + PARAMETER Positive Supply Voltage Positive Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V 114 mA 20 dBm 0.91 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ 2/ PIN PD T CH TM T STG 2/ 3/ 4/ 5/ 1/ 2/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1.8 E+6 hrs. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings apply to each individual FET. 3/ 4/ 5/ TABLE II DC PROBE TESTS (TA = 25 C Nominal) SYMBOL VBVGS3 VBVGD3 VP2 VP3 PARAMETER Breakdown Voltage gate-source Breakdown Voltage gate-drain Pinch-off Voltage Pinch-off Voltage MINIMUM -30 -30 -1.5 -1.5 MAXIMUM -11 -11 -0.3 -0.3 VALUE V V V V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Drain Operating Quiescent Current Small Signal Gain Input Return Loss Output Return Loss Output Power @ 1 dB Compression Gain TYPICAL 6 80 10% Self Bias 28 15 20 20 UNITS V mA dB dB dB dBm TABLE IV THERMAL INFORMATION Parameter Test Conditions TCH o ( C) 108 RTJC (qC/W) 80 TM (HRS) 5.2 E+7 Vd = 6 V RJC Thermal Id = 80 mA Resistance (channel to backside of Pdiss = 0.48 W carrier) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA 32 30 28 Gain (dB) 26 24 22 20 18 11 12 13 14 15 Frequency (GHz) 16 17 18 19 5V 6V 7V Bias Conditions: Vd = 6 V, Id = 80 mA 36 34 Gain Over Temperature (dB) 32 30 28 26 24 22 20 18 11 12 13 14 15 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 -40 0C -20 0C +20 0C +10 0C 0 0C 16 17 18 19 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Preliminary Measured Data Bias Conditions: Vd =5, 6, 7 V, Id = 80 mA 0 -5 5V Input Return Loss (dB) -10 -15 -20 -25 -30 -35 7V 6V -40 11 12 13 14 15 Frequency (GHz) 16 17 18 19 0 -5 -10 Output Return Loss (dB) -15 -20 5V 6V -25 -30 -35 -40 -45 -50 11 12 13 14 15 Frequency (GHz) 16 17 18 19 7V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA 24 Pout @ 1dB Gain Compression (dBm) 23 22 21 20 19 18 17 16 15 11 12 13 14 15 16 17 18 Frequency (GHz) 7V 6V 5V Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA, Frequency @ 15GHz 24 22 20 18 16 Pout (dBm) 14 12 10 8 6 4 2 0 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 1 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 30 5V 29 28 27 Power Gain (dB) 26 25 7V 6V 24 23 22 21 20 19 18 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA 34 32 30 OIP3 (dBm) 28 26 24 22 20 12 13 14 15 Frequency (GHz) 16 17 18 7V 6V 5V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Chip Assembly Diagram This configuration is for a self-bias logic pad current search with connections for bin #1. See Table IV for alternate bin # to get the current of typical 80 10% mA. TABLE V PAD CONNECTIONS BIN No. 1 2 3 4 DC BIAS LADDER 1 Pad 6 to Pad 7 Pad 6 to Pad 8 Pad 6 to Pad 9 Pad 6 to Pad 10 DC BIAS LADDER 2 Pad 11 to Pad 12 Pad 11 to Pad 13 Pad 11 to Pad 14 Pad 11 to Pad 15 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information December 5, 2004 TGA2507-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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